MCQs / Engineering Reviewer - Solid State Devices Part 3

<table align="center" cellpadding="0" cellspacing="0" class="tr-caption-container" style="margin-left: auto; margin-right: auto; text-align: center;"><tbody> <tr><td><a href="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgBAFOUFkXCzEkmkqJFHsgI4myDxrWFeU3oy-9yRyk80jrgIB4gdMpAhtOm051QIk2OBb0TtpG9EFkrOn1YrFakx2zrZRlxxKlsAYeFG3kURgtbegWMXyFzdHvDgAWAFJPuwszw6tusfRsZ/s1600/mcqs-solid-state.jpg" imageanchor="1" style=""><img alt="MCQs - Solid State Devices" border="0" src="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgBAFOUFkXCzEkmkqJFHsgI4myDxrWFeU3oy-9yRyk80jrgIB4gdMpAhtOm051QIk2OBb0TtpG9EFkrOn1YrFakx2zrZRlxxKlsAYeFG3kURgtbegWMXyFzdHvDgAWAFJPuwszw6tusfRsZ/s1600/mcqs-solid-state.jpg" title="MCQs - Solid State Devices" /></a></td></tr> <tr><td class="tr-caption" style="font-size: 12.8000001907349px;">MCQs - Solid State Devices</td></tr> </tbody></table> <b>Multiple Choice Questions / Practice Test</b><br /> <b>Solid State Devices</b><br /> <br /> 1. What is the charge of the hole?<br /> A. Equal to that of a proton<br /> B. Equal to that of an electron<br /> C.  Equal to that  of a neutron<br /> D. Equal to zero<br /> <br /> 2. It is the current gain for the common-emitter configuration<br /> A. α<br /> B. β<br /> C. δ<br /> D. ρ<br /> <br /> 3. when a factor a junction transistor is 0.98,the factor would be equivalent to  ______ value of transistor’s beta.<br /> A. 49<br /> B. 60<br /> C. 20<br /> D. 38<br /> <br /> 4. An emitter resistor is used for ________ in most amplifier circuits.<br /> A. Temperature stabilization<br /> B. Biasing a bipolar junction transistor<br /> C. Current limitation<br /> D. Voltage amplification<br /> <br /> 5. What line is drawn between the open-circuit current on a JFET characteristic curve?<br /> A. Operating point<br /> B. Load line<br /> C. Tangent line<br /> D. Quiescent point<br /> <br /> 6. Which of the choices below is another name for a photoconductive cell?<br /> A. Varicap<br /> B. Varistor<br /> C. Photoresistive device<br /> D. Photodiode<br /> <br /> 7. When both emitter and collector junctions are reverse biased, the transistor is said to be at _______ region.<br /> A. Active<br /> B. Cut-off<br /> C. Saturation<br /> D. Amplifying<br /> <br /> 8. What type of diode is used for tuning receivers and is normally operated with reverse bias and derived its name from voltage variable capacitor?<br /> A. Hot-carrier diode<br /> B. Varactor diode<br /> C. Tunnel diode<br /> D. Zener diode<br /> <br /> 9. What silicon npn tetrode serves as bistable negative-resistance device?<br /> A. BJT<br /> B. Binistor<br /> C. FET<br /> D. Thermistor<br /> <br /> 10. A multiple-terminal solid-state device similar to a transistor that generates frequencies up to about 10000 MHz by injecting electrons or holes into a space-charge layer which rapidly forces these carriers to a collecting electrode.<br /> A. Magnetron<br /> B. IMPATT<br /> C. Klystron<br /> D. Spacistor<br /> <br /> 11. Which of the items below is not a good conductor?<br /> A. Electrolytes<br /> B. Ionized gases<br /> C. Silicon<br /> D. Silver<br /> <br /> 12. What is the net charge if a certain semiconductor losses 4 valence electrons?<br /> A. +4<br /> B. -4<br /> C. +8<br /> D. -8<br /> <br /> 13. What is the net charge if a certain semiconductor gains one valence electron?<br /> A. +1<br /> B. -1<br /> C. +4<br /> D. -4<br /> <br /> 14. What is the approximate voltage drop of LED?<br /> A. 0.3 V<br /> B. 0.7 V<br /> C. 1.5 V<br /> D. 3.8 V<br /> <br /> 15. Under standard conditions, pure germanium has a resistivity of<br /> A.  60 Ω-cm<br /> B. 60 Ω-m<br /> C. 60 Ω-mm<br /> D. 60 x 10-4<br /> <br /> 16. The holding of one extreme amplitude of the input waveform to a certain amount of potential is called<br /> A. Slicing<br /> B. Limiting<br /> C. Rectifying<br /> D. Clamping<br /> <br /> 17. Clamper is also known as<br /> A. DC restorer<br /> B. Rectifier<br /> C. Charger<br /> D. Clipper<br /> <br /> 18. Percentage ripple can be calculated by getting the _______ and multiplying the result by100%.<br /> A. Ratio of the input resistance and input voltage<br /> B. Product of the ac current to dc current<br /> C. Ratio of the ac voltage to dc voltage<br /> D. Addition of the ac and dc component of the given signal<br /> <br /> 19. Which of the following materials has the smallest leakage current?<br /> A. Germanium<br /> B. Carbon<br /> C. Sulfur<br /> D. Silicon<br /> <br /> 20. What refers to annihilation of a hole and electron?<br /> A. Doping<br /> B. Recombination<br /> C. Diffusion<br /> D. Bonding<br /> <br /> 21. What are the two possible breakdown mechanisms in pn junction diodes?<br /> A. Reverse and breakdown effects<br /> B. Threshold and knee effects<br /> C. Avalanche and forward effects<br /> D. Zener and avalanche effects<br /> <br /> 22. What occurs in pn diodes when the electric field in the depletion layer increases to the point where it can break covalent bonds and generate electron hole pairs?<br /> A. Covalent breakdown<br /> B. Diffusion<br /> C. Zener breakdown<br /> D. Avalanche effect<br /> <br /> 23. The amount of additional energy required to emit an electron from the surface of metal is called<br /> A. Potential barrier<br /> B. Junction voltage<br /> C. Work function<br /> D. Knee voltage<br /> <br /> 24. When temperature of a pure semiconductor is increased, its resistance<br /> A. Decreases<br /> B. Remains the same<br /> C. Increases<br /> D. Cannot be estimated<br /> <br /> 25. As a general rule, ________ are found only in semiconductors.<br /> A. Electrons<br /> B. Bulk resistances<br /> C. Depletion layers<br /> D. Holes<br /> <br /> 26. What in a semiconductor is defined as the incomplete part of an electron pair bond?<br /> A. Hole<br /> B. Valence electron<br /> C. Impurity<br /> D. Ion<br /> <br /> 27. When the number of free electrons is increased in doped semiconductor, it becomes a/an ______ semiconductor.<br /> A. N type<br /> B. P type<br /> C. PN type<br /> D. NP type<br /> <br /> 28. Reducing the number of free electrons in a doped semiconductor forms a/an ________ semiconductor.<br /> A. N type<br /> B. P type<br /> C. PNPN type<br /> D. NPN type<br /> <br /> 29. Pure semiconductor atoms contain how many valence electrons?<br /> A. 1<br /> B. 2<br /> C. 4<br /> D. 8<br /> <br /> 30. An acceptor atom contains how many valence electrons?<br /> A. 1<br /> B. 2<br /> C. 3<br /> D. 4<br /> <br /> 31. What is the resistivity of an extrinsic semiconductor?<br /> A. 1 Ω-cm<br /> B. 2 Ω-cm<br /> C. 3 Ω-cm<br /> D. 4 Ω-cm<br /> <br /> 32. The forward resistance crystal diode is in the order of<br /> A. Ω<br /> B. mΩ<br /> C. µΩ<br /> D. kΩ<br /> <br /> 33. What is the ideal value stability factor?<br /> A. 1<br /> B. 0.5<br /> C. Infinite<br /> D. 100<br /> <br /> 34. What is the approximate mass of a neutron at rest?<br /> A. 1.6726 x 10^-27 kg<br /> B. 9.1096 x 10^-31 kg<br /> C. 1.6022 x 10^-19 kg<br /> D. No mass<br /> <br /> 35. Approximate mass at rest of a proton is ______ to that of a neutron.<br /> A. Greater than<br /> B. Equal<br /> C. Less than<br /> D. Comparable<br /> <br /> 36. Charge of an electron is approximately equal to<br /> A. 1.6022 x 10^-19 C<br /> B. -1.6726 x 10^-27 C<br /> C. -1.6022 x 10^-19 C<br /> D. No charge<br /> <br /> 37. What capacitors are used in transistor amplifiers?<br /> A. Mica<br /> B. Air<br /> C. Electrolytic<br /> D. Paper<br /> <br /> 38. What is the reason why a common collector is used for impedance matching?<br /> A. Its output impedance is very high<br /> B. Its output impedance is very low<br /> C. Its input impedance is very low<br /> D. Its input impedance is very high<br /> <br /> 39. In power supplies, circuits that are employed in separating the ac and dc components and bypass the ac components around the load, or prevent their generation are called<br /> A. Filters<br /> B. Limiters<br /> C. Series capacitors<br /> D. Diode circuits<br /> <br /> 40. A nuclei with a common number of protons, but with different number of neutrons<br /> A. Fission<br /> B. Isotope<br /> C. Atom<br /> D. Core<br /> <br /> 41. What is the reason why FET has high input impedance?<br /> A. Because its input is a forward biased<br /> B. Because of the impurity atoms<br /> C. Because its input is reverse biased<br /> D. Because it is made of semiconductor material.<br /> <br /> 42. A MOSFET is sometimes called _____FET<br /> A. Open gate<br /> B. Shorted gate<br /> C. Metallic gate<br /> D. Insulated gate<br /> <br /> 43. Which of the following choices is an advantage of a MOSFET over a BJT in an RF amplifier circuit?<br /> A. Low voltage operation<br /> B. Low noise<br /> C. Low amplification of signals<br /> D. Compatibility<br /> <br /> 44. The voltage gain of an emitter follower circuit is<br /> A. High<br /> B. Low<br /> C. Very high<br /> D. Moderate<br /> <br /> 45. A _________ is considered a current controlled device.<br /> A. Diode<br /> B. Field effect transistor<br /> C. Transistor<br /> D. Resistor<br /> <br /> 46. A ________ is considered a voltage controlled device<br /> A. FET<br /> B. Diode<br /> C. Transistor<br /> D. Capacitor<br /> <br /> 47. The value of coupling capacitor, Cc in RC coupling is about<br /> A. 0.01 µF<br /> B. 0.1 µF<br /> C. 10 µF<br /> D. 100 µF<br /> <br /> 48. FET has a pinch-off voltage of about<br /> A. 0.5 V<br /> B. 5 V<br /> C. 10 V<br /> D. 20 V<br /> <br /> 49. What is the point of intersection between a diode characteristic and a load line?<br /> A. Q point<br /> B. Quiescent point<br /> C. Operating point<br /> D. All of the above<br /> <br /> 50. A measure of the ability of an LED to produce the desired number of lumens generated per applied watt of electrical energy.<br /> A. Luminous intensity<br /> B. Luminous efficiency<br /> C. Luminous efficacy<br /> D. Luminous ability<br /> <div> <br /></div>

MCQs / Engineering Reviewer - Solid State Devices Part 3

MCQs - Solid State Devices Multiple Choice Questions / Practice Test Solid State Devices 1. What is the charge of the hole? A. Equal...

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MCQs / Engineering Reviewer - Solid State Devices Part 2

<div class="separator" style="clear: both; text-align: center;"> </div> <table align="center" cellpadding="0" cellspacing="0" class="tr-caption-container" style="margin-left: auto; margin-right: auto; text-align: center;"><tbody> <tr><td><a href="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgBAFOUFkXCzEkmkqJFHsgI4myDxrWFeU3oy-9yRyk80jrgIB4gdMpAhtOm051QIk2OBb0TtpG9EFkrOn1YrFakx2zrZRlxxKlsAYeFG3kURgtbegWMXyFzdHvDgAWAFJPuwszw6tusfRsZ/s1600/mcqs-solid-state.jpg" imageanchor="1" style=""><img alt="MCQs - Solid State Devices" border="0" src="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgBAFOUFkXCzEkmkqJFHsgI4myDxrWFeU3oy-9yRyk80jrgIB4gdMpAhtOm051QIk2OBb0TtpG9EFkrOn1YrFakx2zrZRlxxKlsAYeFG3kURgtbegWMXyFzdHvDgAWAFJPuwszw6tusfRsZ/s1600/mcqs-solid-state.jpg" title="MCQs - Solid State Devices" /></a></td></tr> <tr><td class="tr-caption" style="font-size: 12.8000001907349px;">MCQs - Solid State Devices</td></tr> </tbody></table> <b>Multiple Choice Questions / Practice Test</b><br /> <b>Solid State Devices</b><br /> <br /> 1. The time taken by the diode to operate in the reversed condition from forward conduction.<br /> A. Maximum power time<br /> B. Reverse recovery time<br /> C. Lifetime<br /> D. Time allocation<br /> <br /> 2. Approximately, the atomic weight of germanium is<br /> A. 32<br /> B. 28.09<br /> C. 72.7<br /> D. 16<br /> <br /> 3. Atomic weight of silicon at 300 K is<br /> A. 28.09<br /> B. 72.7<br /> C. 5.32<br /> D. 16<br /> <br /> 4. An LED and phototransistor is equivalent to a/an<br /> A. Thermocouple<br /> B. FET<br /> C. Optocoupler<br /> D. Regulator<br /> <br /> 5. Optocoupler is otherwise known as<br /> A. Laser<br /> B. Photodiodes<br /> C. Optoisolator<br /> D. Photoconductive cell<br /> <br /> 6. When the emitter junction is forward biased while the collector junction is reverse biased, the transistor is at ________ region.<br /> A. Cut-off<br /> B. Saturation<br /> C. Active<br /> D. Breakdown<br /> <br /> 7. When both emitter and collector junction are forward biased, the transistor is said to be at _________ region.<br /> A. Active<br /> B. Cut-off<br /> C. Breakdown<br /> D. Saturation<br /> <br /> 8. An equivalent circuit of a diode in which it is represented as a switch in series with a barrier potential.<br /> A. First approximation<br /> B. Second approximation<br /> C. Third approximation<br /> D. Fourth approximation<br /> <br /> 9. Which of the following is the equivalent circuit for a diode for third approximation?<br /> A. A switch only<br /> B. A switch in series with a battery in series with a resistance<br /> C. A switch in series with battery<br /> D. A switch in series with a resistance<br /> <br /> 10. A silicon crystal is a/an ___________ of a semiconductor if every atom in the crystal is a silicon atom.<br /> A. Extrinsic<br /> B. Intrinsic<br /> C. P-type<br /> D. N-type<br /> <br /> 11. With pnp voltage divider bias, you must use<br /> A. Ground<br /> B. Negative power supplies<br /> C. Positive power supplies<br /> D. Resistors<br /> <br /> 12. Two pn silicon diodes are connected in series opposing. A 5 V voltage is impressed upon them. Find the voltage across each junction at room temperature when nVT= 0.052 V.<br /> A. 0.236 V, 3.2 V<br /> B. 4.764 V, 0.236 V<br /> C. 0.036 V, 4.964 V<br /> D. 3.21 V, 1.79 V<br /> <br /> 13. A half-wave signal has a period of<br /> A. 16.7 ms<br /> B. 8.3 ms<br /> C. 16.7 µs<br /> D. 8.3 µs<br /> <br /> 14. A full-wave signal has a period of<br /> A. 16.7 µs<br /> B. 8.3 µs<br /> C. 8.3 ms<br /> D. 16.7 ms<br /> <br /> 15. When doping increases, ________ of a semiconductor decreases.<br /> A. Impurity<br /> B. Conductivity<br /> C. Bulk resistance<br /> D. Minority carrier<br /> <br /> 16. Which of the following has the least noise level?<br /> A. FET<br /> B. BJT<br /> C. Triode<br /> D. Tetrode<br /> <br /> 17. Which of the following has the highest input impedance<br /> A. FET<br /> B. BJT<br /> C. MOSFET<br /> D. Crystal diode<br /> <br /> 18. The frequency of a half-wave signal is<br /> A. Twice the line frequency<br /> B. Equal to the line frequency<br /> C. One-half of the line frequency<br /> D. One-fourth the line frequency<br /> <br /> 19. For a full-wave rectifier, the output frequency<br /> A. Equals one-half the input frequency<br /> B. Equals the line frequency<br /> C. Equals two times the input<br /> D. Is three times the line frequency<br /> <br /> 20. The averaged dc voltage of a half wave rectifier circuit is _________ of the value of the peak input voltage.<br /> A. 63.6%<br /> B. 31.8%<br /> C. 4.8%<br /> D. 6.2%<br /> <br /> 21. The average dc voltage of a full wave rectifier circuit is __________ of the value of the peak input voltage.<br /> A. 31.8%<br /> B. 48.1%<br /> C. 63.6%<br /> D. 1%<br /> <br /> 22. Typical leakage current in a pn junction is in the order of<br /> A. µA<br /> B. mA<br /> C. nA<br /> D. pA<br /> <br /> 23. The resistance of a forward biased pn junction is in the order of<br /> A. Ω<br /> B. mΩ<br /> C. µΩ<br /> D. kΩ<br /> <br /> 24. The removal by electronic means of one extremity of an input waveform is called ________.<br /> A. Filtering<br /> B. Clamping<br /> C. Amplifying<br /> D. Clipping<br /> <br /> 25. Which of the choices below does not describe a clipper circuit?<br /> A. Limiter<br /> B. Amplitude selector<br /> C. Slicer<br /> D. Baseline stabilizer<br /> <br /> 26. The varactor diode is also called as<br /> A. Voltage-variable capacitance<br /> B. Varicap<br /> C. Epicap<br /> D. All of the above<br /> <br /> 27. What diode has no depletion layer<br /> A. Varactor<br /> B. Varistor<br /> C. Schottky diode<br /> D. Shockley diode<br /> <br /> 28. Varistors are used for line filtering to eliminate spikes and dips and is also called<br /> A. Transient regulator<br /> B. Transient limiter<br /> C. Transient filter<br /> D. Transient suppressor<br /> <br /> 29. Defined as random motion of holes and free electrons due to thermal agitation<br /> A. Fission<br /> B. Fusion<br /> C. Diffusion<br /> D. Ionization<br /> <br /> 30. The temperature coefficient of resistance of a semiconductor is<br /> A. Positive<br /> B. Negative<br /> C. Zero<br /> D. Infinity<br /> <br /> 31. A large signal amplifier which is biased so that collector current flow continuously during the complete electrical cycle of the signal as well as when no signal is present<br /> A. Class A<br /> B. Class B<br /> C. Class AB<br /> D. Class C <br /> <br /> 32. A large signal amplifier which is biased so that current is non zero for less than one-half cycle.<br /> A. Class AB<br /> B. Class C<br /> C. Class A<br /> D. Class B<br /> <br /> 33. A class ____ amplifier stage operates with a small forward bias of the transistor so that some collector current flows at all times<br /> A. A<br /> B. B<br /> C. AB<br /> D. C<br /> <br /> 34. What factor is shown on a data sheet that tells how much you have to reduce the power of a device?<br /> A. Power factor<br /> B. Derating factor<br /> C. Reactive factor<br /> D. Reduction factor<br /> <br /> 35. The time it takes to turn off a forward-biased diode is called the<br /> A. Forward recovery time<br /> B. Reverse recovery time<br /> C. Recombination<br /> D. Turn-off time<br /> <br /> 36. A heavily doped semiconductor has<br /> A. High resistance<br /> B. No effect on the semiconductor characteristics<br /> C. More heat dissipation<br /> D. Low resistance<br /> <br /> 37. Gallium arsenide, aluminum arsenide and gallium phosphide are classified as<br /> A. Elementary semiconductor<br /> B. Secondary semiconductor<br /> C. Intrinsic material made by doping<br /> D. Insulators<br /> <br /> 38. A lightly doped semiconductor has<br /> A. Low resistance<br /> B. High resistance<br /> C. No effect on a semiconductor<br /> D. More heat dissipated behaviors<br /> <br /> 39. The property or ability of a material to support charge flow or electron flow<br /> A. Resistance<br /> B. Conductance<br /> C. Resistivity<br /> D. Permeance<br /> <br /> 40. What is also known as photodiffusion effect?<br /> A. Dember effect<br /> B. Skin effect<br /> C. Destriau effect<br /> D. Night effect<br /> <br /> 41. An effect that occurs within the entire bulk of a semiconductor material rather than in a localized region or junction<br /> A. Silicon effect<br /> B. Dember effect<br /> C. Bulk effect<br /> D. Destriau effect<br /> <br /> 42. The creation voltage in a conductor or semiconductor by illumination of one surface<br /> A. Dember effect<br /> B. Skin effect<br /> C. Destriau effect<br /> D. Night effect<br /> <br /> 43. What device uses a material catwhisker as its anode and is classified as a hot-carrier diode?<br /> A. PIN<br /> B. Point-contact diode<br /> C. Shockley diode<br /> D. Crystal diode<br /> <br /> 44. What is the typical operating current of an LED?<br /> A. 50 mA<br /> B. 10 mA<br /> C. 20 mA<br /> D. 5 mA<br /> <br /> 45. At absolute zero temperature, a semiconductor behaves as a/an<br /> A. Good conductor<br /> B. Superconductor<br /> C. Insulator<br /> D. Variable resistor<br /> <br /> 46. Avalanche breakdown in a semiconductor takes place<br /> A. When forward current exceeds a certain value<br /> B. When potential barrier is reduced to zero<br /> C. When reverse bias exceeds a certain value<br /> D. When forward bias exceeds a certain value<br /> <br /> 47. A cold-cathode glow-discharge diode having a copper anode and a large cathode of sodium or other material.<br /> A. Tunnel diode<br /> B. BARITT diode<br /> C. Anotron<br /> D. READ diode<br /> <br /> 48. A microwave diode in which the carriers that transverse the drift region are generated by minority carrier injection from a forward-biased junction instead of being extracted from the plasma of an avalanche region.<br /> A. IMPATT<br /> B. TRAPAT<br /> C.  BARITT diode<br /> D. Esaki diode<br /> <br /> 49. What electronic circuit converts AC to DC where the DC output peak value can be greater than the AC input peak value?<br /> A. Voltage multiplier<br /> B. Rectifier<br /> C. Clamper<br /> D. Clipper<br /> <br /> 50. Which of the item below does not mean a VARACTOR diode?<br /> A. VOLTACAPS<br /> B. VARICAPS<br /> C. Voltage variable capacitors<br /> D. Variable resistance diode<br /> <div> <br /></div> <br /> Click the download button below to download this practice set <i>with answers</i> in PDF format.<br /> <a href="http://sh.st/g0vDQ" target="_blank"><img alt="Engineering Reviewer" border="0" src="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEj1-NjrpCxm6yjAbseWXzXAju2YTydqeOqudQCUdc7hgym5LtE20MCn25TSOjZjV02OCrkKMexBzS7VQClWlabKvR8YlX_gPz4idqAXShssWs9hSM6-Ym3HgwW1V7JJHMyE-X79QK0-KbTU/s1600/dl.png" /></a>

MCQs / Engineering Reviewer - Solid State Devices Part 2

MCQs - Solid State Devices Multiple Choice Questions / Practice Test Solid State Devices 1. The time taken by the diode to operate ...

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MCQs / Engineering Reviewer - Solid State Devices Part 1

<div class="separator" style="clear: both; text-align: center;"> </div> <table align="center" cellpadding="0" cellspacing="0" class="tr-caption-container" style="margin-left: auto; margin-right: auto; text-align: center;"><tbody> <tr><td style="text-align: center;"><a href="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgBAFOUFkXCzEkmkqJFHsgI4myDxrWFeU3oy-9yRyk80jrgIB4gdMpAhtOm051QIk2OBb0TtpG9EFkrOn1YrFakx2zrZRlxxKlsAYeFG3kURgtbegWMXyFzdHvDgAWAFJPuwszw6tusfRsZ/s1600/mcqs-solid-state.jpg" imageanchor="1" style=""><img alt="MCQs - Solid State Devices" border="0" src="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgBAFOUFkXCzEkmkqJFHsgI4myDxrWFeU3oy-9yRyk80jrgIB4gdMpAhtOm051QIk2OBb0TtpG9EFkrOn1YrFakx2zrZRlxxKlsAYeFG3kURgtbegWMXyFzdHvDgAWAFJPuwszw6tusfRsZ/s1600/mcqs-solid-state.jpg" title="MCQs - Solid State Devices" /></a></td></tr> <tr><td class="tr-caption" style="text-align: center;">MCQs - Solid State Devices</td></tr> </tbody></table> <b>Multiple Choice Questions / Practice Test</b><br /> <b>Solid State Devices</b><br /> <br /> 1. How many electrons are there in the fourth orbit of a copper atom?<br /> A. 1<br /> B. 2<br /> C. 3<br /> D. 4<br /> <br /> 2. The maximum permissible number of electrons in the third orbit is<br /> A. 18<br /> B. 8<br /> C. 32<br /> D. 2<br /> <br /> 3. Varactor diodes are commonly used<br /> A. As voltage controlled capacitance<br /> B. As a constant current source<br /> C. As voltage multiplier<br /> D. As a constant voltage source<br /> <br /> 4. The reason why electrons are not pulled into the nucleus of an atom.<br /> A. Because of the centrifugal or outward force created by their orbital motion.<br /> B. Because of the force of attraction between them and the nucleus is weak.<br /> C. Because they are not being attracted by the positive nucleus.<br /> D. Because of the strong bonding between them that resists any force pulling them towards the nucleus.<br /> <br /> 5. The electrons in the largest orbit travel ________ than the electrons in the smaller orbits.<br /> A. More slowly<br /> B. Faster<br /> C. In the same velocity<br /> D. A little bit slower<br /> <br /> 6. A transistor configuration with the lowest current gain.<br /> A. Common base<br /> B. Common emitter<br /> C. Common collector<br /> D. Emitter-follower<br /> <br /> 7. A semiconductor in its purest form is called<br /> A. Pure semiconductor<br /> B. Doped semiconductor<br /> C. Intrinsic semiconductor<br /> D. Extrinsic semiconductor<br /> <br /> 8. Valence orbit is the other form for<br /> A. Outer orbit<br /> B. 3rd orbit<br /> C. 4th orbit<br /> D. 2nd orbit<br /> <br /> 9. K shell means<br /> A. First orbit<br /> B. 2nd orbit<br /> C. 3rd orbit<br /> D. 4th orbit<br /> <br /> 10.  For either germanium or silicon diodes, the barrier potential decreases _______ for each Celsius degree rise.<br /> A. 1 mV<br /> B. 3 mV<br /> C. 4 mV<br /> D. 2 Mv<br /> <br /> 11. A diode modeling circuit which considers the threshold voltage, average resistance and switch as the diode’s equivalent circuit.<br /> A. Ideal model<br /> B. Simplified model<br /> C. Piecewise linear model<br /> D. Real model<br /> <br /> 12. There are two mechanisms by which holes and electrons move through a silicon crystal. They are<br /> A. Covalent bond and recombination<br /> B. Diffusion and drift<br /> C. Free and charge particles<br /> D. Forward and reverse bias<br /> <br /> 13. A semiconductor is an element with a valence of<br /> A. Four<br /> B. Eight<br /> C. Two<br /> D. One<br /> <br /> 14. What orbit controls the electrical property of the atom?<br /> A. Valence orbit<br /> B. First orbit<br /> C. Fourth orbit<br /> D. M shell<br /> <br /> 15. ________ is a substance that contains atoms with several bands of electrons but with only one valence electron.<br /> A. Insulator<br /> B. Conductor<br /> C. Semiconductor<br /> D. Resistor<br /> <br /> 16. Pure silicon crystal atoms contain how may valence electrons as a result of covalent bonding?<br /> A. 1<br /> B. 4<br /> C. 8<br /> D. 16<br /> <br /> 17. The peak inverse voltage of a full wave center tapped rectifier circuit is equal to _______ of the input signal.<br /> A. Thrice the peak<br /> B. Twice the peak<br /> C. One half<br /> D. One third<br /> <br /> 18. Diffusion or storage capacitance is the term used to refer to<br /> A. The reverse bias capacitance of a diode<br /> B. The forward bias capacitance of a diode<br /> C. The breakdown capacitance of a zener diode<br /> D. The effective capacitance of the rectifier<br /> <br /> 19. What is considered as the key electrical conductivity?<br /> A. The number of electrons in the valence orbit<br /> B. The number of protons in the nucleus<br /> C. The number of neutrons in the nucleus<br /> D. The number of protons plus the number of electrons in the atom<br /> <br /> 20. Each atom in the silicon crystal has how many electrons in its valence orbit?<br /> A. 8<br /> B. 32<br /> C. 2<br /> D. 4<br /> <br /> 21. Lifetime is the amount of time between the creation and disappearance of a/an<br /> A. Free electron<br /> B. Proton<br /> C. Ion<br /> D. Neutron<br /> <br /> 22. A silicon crystal is an intrinsic semiconductor<br /> A. If every atom in the crystal is a silicon atom<br /> B. If majority of the atoms in crystal is a silicon atom<br /> C. If the crystal contains 14 silicon atoms<br /> D. If  the crystal is undoped<br /> <br /> 23. At room temperature, a silicon crystal acts approximately like a/an<br /> A. Insulator<br /> B. Semiconductor<br /> C. Conductor<br /> D. Superconductor<br /> <br /> 24. An extrinsic semiconductor is a<br /> A. Doped semiconductor<br /> B. Pure semiconductor<br /> C. Good insulator<br /> D. Good conductor<br /> <br /> 25. What is associated with random motion due to thermal agitation in the movement of holes and electrons in a silicon crystal?<br /> A. Drift<br /> B. Diffusion<br /> C. Doping<br /> D. Recombination<br /> <br /> 26. The peak inverse voltage of a half wave rectifier circuit is approximately equal to the ________ of the input signal.<br /> A. Peak amplitude<br /> B. Frequency<br /> C. Voltage sinusoidal<br /> D. Current<br /> <br /> 27. Silicon that has been doped with a trivalent impurity is called a/an<br /> A. P-type semiconductor<br /> B. N-type semiconductor<br /> C. Intrinsic semiconductor<br /> D. Extrinsic semiconductor<br /> <br /> 28. Silicon that has been doped with a pentavalent impurity is called a/an<br /> A. N-type semiconductor<br /> B. P-type semiconductor<br /> C. Intrinsic semiconductor<br /> D. Extrinsic semiconductor<br /> <br /> 29. What is another name for a pn crystal<br /> A. Junction diode<br /> B. PN junction<br /> C. Diode<br /> D. Lattice<br /> <br /> 30. An acceptor atom is also called<br /> A. Pentavalent atom<br /> B. Trivalent atom<br /> C. Minority carrier<br /> D. Majority carrier<br /> <br /> 31. Which is a donor atom?<br /> A. Trivalent atom<br /> B. Aluminum<br /> C. Boron<br /> D. Pentavalent atom<br /> <br /> 32. In an n-type semiconductor, free electrons are called<br /> A. Minority carriers<br /> B. Valence electrons<br /> C. Majority carriers<br /> D. Charge carriers<br /> <br /> 33. in an n-type semiconductor, holes are called<br /> A. minority carriers<br /> B. majority carriers<br /> C. protons<br /> D. charge carriers<br /> <br /> 34. What is the barrier potential of germanium at 25˚C<br /> A. 0.7 V<br /> B. 0.3 V<br /> C. 0.5 V<br /> D. 0.4 V<br /> <br /> 35. The barrier potential for a silicon diode at 25˚C is approximately<br /> A. 0.4 V<br /> B. 0.3 V<br /> C. 0.7 V<br /> D. 0.5 V<br /> <br /> 36. Each pair of positive and negative ions at the junction is called a/an<br /> A. Anion<br /> B. Positron<br /> C. Cation<br /> D. Dipole<br /> <br /> 37. When temperature increases, barrier potential ________<br /> A. Remains the same<br /> B. Decreases<br /> C. Increases<br /> D. Either increases or decreases depending on the semiconductor material used<br /> <br /> 38. Avalanche effects occurs at<br /> A. Higher reverse voltages<br /> B. Lower reverse voltages<br /> C. Higher forward voltages<br /> D. Lower forward voltages<br /> <br /> 39. The creation of free electrons through zener effect is also known as<br /> A. Avalanche emission<br /> B. Thermionic emission<br /> C. Low-field emission<br /> D. High-field emission<br /> <br /> 40. Zener effect only depends on the<br /> A. High-speed minority carriers<br /> B. High-speed majority carriers<br /> C. Intensity of the electric field<br /> D. Intensity of the magnetic field<br /> <br /> 41. What temperature is inside the diode, right at the junction of the p and n-type materials?<br /> A. Junction temperature<br /> B. Ambient temperature<br /> C. Internal temperature<br /> D. Absolute temperature<br /> <br /> 42. What is the input control parameter of a FET?<br /> A. Gate voltage<br /> B. Source voltage<br /> C. Drain voltage<br /> D. Gate current<br /> <br /> 43. One of the important diode parameters which gives the magnitude of current the diode candle without burning.<br /> A. Reverse saturation current<br /> B. Reverse current<br /> C. Forward current<br /> D. Forward breakdown current<br /> <br /> 44. The maximum reverse voltage that can be applied before current surges is called<br /> A. Reverse recovery time<br /> B. Maximum junction voltage<br /> C. Forward voltage<br /> D. Reverse breakdown voltage<br /> <br /> 45. What is the other name of Esaki diode?<br /> A. Diac<br /> B. Hot-carrier diode<br /> C. Shockley diode<br /> D. Tunnel diode<br /> <br /> 46. The most important application of schottky diodes is in<br /> A. Digital computers<br /> B. Power supplies<br /> C. Amplifier circuits<br /> D. Voltage regulators<br /> <br /> 47. A diode is a nonlinear device because<br /> A. It produces a nonlinear graph<br /> B. Its current is not directly proportional to its voltage<br /> C. It has a built-in barrier potential<br /> D. It can rectify alternating current<br /> <br /> 48. The sum of the resistance of the p-region and the n-region is called<br /> A. Junction resistance<br /> B. Extrinsic resistance<br /> C. Intrinsic resistance<br /> D. Bulk resistance<br /> <br /> 49. What is the typical bulk resistance of rectifier diodes?<br /> A. Less than 1Ω<br /> B. Greater than 1Ω<br /> C. Equal to 1Ω<br /> D. It depends on the doping level<br /> <br /> 50. The reverse bias diode capacitance is termed as<br /> A. Transition region capacitance<br /> B. Diffusion capacitance<br /> C. Storage capacitance<br /> D. Reverse capacitance<br /> <div> <br /></div> <div> <br /></div> <div> Click the download button below to download this practice set <i>with answers</i> in PDF format.<br /> <a href="http://sh.st/g0vU1" target="_blank"><img alt="Engineering Reviewer" border="0" src="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEj1-NjrpCxm6yjAbseWXzXAju2YTydqeOqudQCUdc7hgym5LtE20MCn25TSOjZjV02OCrkKMexBzS7VQClWlabKvR8YlX_gPz4idqAXShssWs9hSM6-Ym3HgwW1V7JJHMyE-X79QK0-KbTU/s1600/dl.png" /></a></div>

MCQs / Engineering Reviewer - Solid State Devices Part 1

MCQs - Solid State Devices Multiple Choice Questions / Practice Test Solid State Devices 1. How many electrons are there in the fou...

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